Loading patent…
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsMasahiro Sakurada, Takeshi Kobayashi, Tatsuo Mori, Izumi Fusegawa, Tomohiko Ohta
Estimating the term…
There can be provided a silicon single crystal wafer grown according to Czochralski method wherein the whole plane of the wafer is occupied by N region on the outside of OSF generated in a shape of a ring by thermal oxidation treatment and there exists no defect region detected by Cu deposition. Thereby, there can be produced a silicon single crystal wafer according to CZ method, which does not belong to any of V region rich in vacancies, OSF region and I region rich in interstitial silicons, and can surely improve electric characteristics such as oxide dielectric breakdown voltage characteristics or the like under stable manufacture conditions.
A silicon single crystal wafer grown according to Czochralski method characterized in that the whole plane of the wafer is occupied by N region on the outside of OSF generated in a shape of a ring by thermal oxidation treatment and there exists no defect region detected by Cu deposition.
A silicon single crystal wafer grown according to Czochralski method characterized in that the whole plane of the wafer is occupied by N region on the outside of OSF generated in a shape of a ring by thermal oxidation treatment and there exists in the whole plane of the wafer neither a defect region detected by Cu deposition nor Ni region where oxygen precipitation is hardly caused.
A method for producing a silicon single crystal according to Czochralski method characterized in that the crystal is grown in a defect-free region which is N region on the outside of OSF generated in a shape of a ring when the grown silicon single crystal wafer is subjected to thermal oxidation treatment in which a defect region detected by Cu deposition does not exist.
A method for producing a silicon single crystal according to the Czochralski method characterized in that the crystal is grown with controlling a growth rate between the growth rate of the boundary where the defect region detected by Cu deposition remaining after disappearance of OSF ring is disappeared when gradually decreasing a growth rate of silicon single crystal during pulling and the growth rate of the boundary where interstitial dislocation loop is generated when a growth rate is gradually lowered further.
A method for producing a silicon single crystal according to Czochralski method characterized in that the crystal is grown in a defect-free region which is N region on the outside of OSF generated in a shape of a ring when the grown silicon single crystal wafer is subjected to thermal oxidation treatment in which neither a defect region detected by Cu deposition nor Ni region where oxygen precipitation is hardly caused exists.
A method for producing a silicon single crystal according to the Czochralski method characterized in that the crystal is grown with controlling a growth rate between the growth rate of the boundary where the defect region detected by Cu deposition remaining after disappearance of OSF ring is disappeared when gradually decreasing a growth rate of silicon single crystal during pulling and the growth rate of the boundary where the Ni region in which oxygen precipitation is hardly caused is generated when a growth rate is gradually lowered further.
Dependencies are inferred from the claim text.