Transfer mask, method of dividing pattern or transfer mask, and method of manufacturing transfer mask
AssigneeHoya Corporation
InventorIsao Amemiya
Life of this patent
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Abstract
In a pattern of a transfer mask to transfer a transfer pattern to a substrate to be transferred by the use of energy beams, the transfer mask being made by forming an aperture pattern in a thin film portion supported by a supporting frame portion, when the transfer pattern includes a shielding pattern in which one part is connected to at least the periphery of the transfer mask, a shielding pattern portion, where the ratio of the surface area of the pattern surface portion on the transfer mask to a sectional area of a supporting portion is larger than 5000, is split and developed.
Claims12
A transfer mask to transfer a transfer pattern to a substrate to be transferred by the use of energy beams, the transfer mask being made by forming an aperture pattern in a thin film portion supported by a supporting frame portion, said transfer mask comprising:
- a transfer pattern which is a shielding pattern, in which one part is connected to at least the periphery of the transfer mask, and in which a shielding pattern portion, where the ratio of the surface area of a pattern surface portion on the transfer mask to the sectional area of a supporting portion is larger than 5000, is split and developed.
A transfer mask to transfer a transfer pattern to a substrate to be transferred by the use of energy beams, the transfer mask being made by forming an aperture pattern in a thin film portion supported by a supporting frame portion, said transfer mask comprising:
- a transfer pattern which is a shielding pattern, in which one part is connected to at least the periphery of the transfer mask, and which is formed so that a shielding pattern portion, where the ratio of the surface area of a pattern surface portion on the transfer mask to the sectional area of a supporting portion is equal to or less than 5000, is not split and developed.
A transfer mask to transfer a transfer pattern to a substrate to be transferred by the use of energy beams, the transfer mask being made by forming an aperture pattern in a thin film portion supported by a supporting frame portion,
- wherein said transfer mask is adapted to form a shielding pattern of such a type that shielding pattern portions which are supported and fixed in at least two positions of the periphery of the transfer mask are closely adjacent to each other, and said transfer mask includes a pattern obtained by splitting and developing a pattern in which the length of the shielding pattern on the transfer mask is equal to or larger than an allowable length y of the shielding pattern represented by Equation 2 so that the length is smaller than the allowable length y and the density of the pattern becomes more coarse.
- allowable pattern length (y)=412.5X−95.33 (Equation 2)
- X:
- pattern width
A pattern split method of a transfer mask to transfer a transfer pattern to a substrate to be transferred by the use of energy beams, the transfer mask being made by forming an aperture pattern in a thin film portion supported by a supporting frame portion,
- wherein, when the transfer pattern has a shielding pattern in which one part is supported and fixed to the periphery of the transfer mask, whether it is necessary to split and develop the aperture pattern is determined in accordance with the surface area of the shielding pattern and the sectional area of a supporting portion.
A pattern split method of a transfer mask to transfer a transfer pattern to a substrate to be transferred by the use of energy beams, the transfer mask being made by forming an aperture pattern in a thin film portion supported by a supporting frame portion,
- wherein when the transfer pattern has a shielding pattern of such a type that shielding pattern portions which are supported and fixed in at least two positions of the periphery of the transfer mask are closely adjacent to each other, whether it is necessary to split and develop the aperture pattern is determined in accordance with the length of the shielding pattern and the pattern width.
A transfer mask which is manufactured by a method according to claim 10 or 11.
Dependencies are inferred from the claim text.