Method for thermal processing semiconductor wafer
AssigneeUshio Denki Kabushiki Kaisya
InventorsKoji Miyauchi, Tatsushi Owada
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Abstract
The present invention provides a method for thermal processing a semiconductor wafer wherein the semiconductor wafer is heat-treated by means of flash radiation means constituted by a flash discharge lamp after preheating the semiconductor wafer to a predetermined temperature by means of preheating means, the preheating is performed at a preheating temperature capable of controlling that the maximum tension of the semiconductor wafer when heated by the flash radiation means is to be less than the tense strength of the semiconductor wafer itself.
Claims4
A method for thermal processing a semiconductor wafer, wherein the semiconductor wafer is heat-treated by means of flash radiation means constituted by a flash discharge lamp after preheating the semiconductor wafer to a predetermined temperature by means of preheating means, comprising
- preheating the semiconductor wafer at a preheating temperature capable of controlling that the maximum tension of the semiconductor wafer when heated by flash radiation means is to be less than the tense critical strength of the semiconductor wafer itself.
A method for thermal processing a semiconductor wafer, wherein the semiconductor wafer is heat-treated by means of flash radiation means constituted by a flash discharge lamp after preheating the semiconductor wafer to a predetermined temperature by means of preheating means, comprising
- preheating the semiconductor wafer at a preheating temperature capable of controlling that the maximum value of the tension of the range 0.18 to 0.28 mm from the surface of the semiconductor wafer being irradiated with the flash from flash radiation means is to be less than the tense critical strength of the semiconductor wafer itself, when same is heated by the flash radiation means.
Dependencies are inferred from the claim text.