Apparatus for fabricating a semiconductor device and method of doing the same
OwnerKen Tokashikiinventor
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Abstract
There is provided a method of fabricating a semiconductor device, including the steps of (a) generating plasma in the following conditions: (a1) an RF bias voltage has a frequency equal to or greater than 1 MHz, (a2) an RF source voltage has a frequency equal to or greater than 1 MHz, (a3) the RF source voltage is modulated by pulses in a cycle equal to or greater than 100 μsec, and (a4) pulse-on time is equal to or greater than 50 μsec, and (b) patterning multi-layered metal wirings by etching through the plasma The method makes it possible to reduce charging damage to a gate insulating film, even if wirings are further spaced away from adjacent ones and/or an antenna ratio of multi-layered metal wirings is further increased.
Claims22
A method of fabricating a semiconductor device, comprising the steps of:
- (a) generating plasma in the following conditions:
- (a1) an RF bias voltage has a frequency equal to or greater than 1 MHz;
- (a2) an RF source voltage has a frequency equal to or greater than 1 MHz;
- (a3) said RF source voltage is modulated by pulses in a cycle equal to or greater than 100 μsec;
- and
- (a4) pulse-on time is equal to or greater than 50 μsec, and
- (b) patterning multi-layered metal wirings by etching through said plasma.
An apparatus for fabricating a semiconductor device, comprising:
- (a) a hermetically sealed chamber;
- (b) a gas introducer introducing gas into said chamber;
- (c) a gas exhauster exhausting gas from said chamber;
- (d) an RF source voltage supplier applying an RF source voltage having a frequency equal to or greater than 1 MHz to said chamber to thereby generate inducive coupling plasma from said gas;
- (e) an RF bias voltage source applying an RF bias voltage to a substrate put in said chamber, said RF bias voltage having a frequency equal to or greater than 1 MHz;
- and
- (f) a pulse generator which transmits pulses to said RF source voltage supplier to thereby modulate said RF source voltage in a cycle equal to or greater than 100 μsec with pulse-on time being kept equal to or greater than 50 μsec.
Dependencies are inferred from the claim text.