Method for surface roughness enhancement in semiconductor capacitor manufacturing

A method for increasing the surface area of an original surface in a semiconductor device, the method comprising:

• forming a base layer upon the original surface;
• forming a silicon layer upon said base layer;
• forming a masking layer upon said silicon layer, said masking layer having a varying thickness;
• said base layer, said silicon layer and said masking layer being included in a layered mask;
• applying a roughening etch, said roughening etch further comprising a first isotropic etch which etches said silicon layer at a faster rate than said masking layer;
• said roughening etch further amplifying a non-uniformity in the planarity of said masking layer into said silicon layer;
• and
• applying a transfer etch, said transfer etch further comprising a second isotropic etch which etches said masking layer, said silicon layer and said base layer at about the same rate;
• wherein said transfer etch transfers said non-uniformity in the planarity of said silicon layer into a non-uniformity of the planarity of the original surface by removing exposed portions of the original surface as said base layer is removed.