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US 2003/0113973 A1Published application
Method for fabricating local interconnects
OwnerTung-Yuan Chuinventor
Life of this patent
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Abstract
A local interconnect fabrication method is disclosed. A nitride spacer is formed on each sidewall of an etched recess formed across a shallow trench isolation region. The spacer prevents contact of metal with the exposed silicon substrate in the recess, and thus reduces leakage. High performance and low energy dissipation of devices can be achieved by reducing undesirable leakage current.
Claims14
A method for fabricating local interconnects, the method comprising:
- providing a substrate having a first source/drain (S/D) region and a second S/D region laterally formed on the substrate, wherein the second S/D region is adjacent to the first S/D region and isolated from the first S/D region by an isolation region;
- depositing an etch stop layer covering the first S/D region, the second S/D region and the isolation region;
- depositing an interlayer dielectric (ILD) layer over the etch stop layer;
- sequentially etching the ILD layer and the etch stop layer to form a local interconnect opening exposing portions of the first S/D region, the second S/D region and the isolation region, wherein a recess having a depth of h is formed in the isolation region after finishing the etch of the etch stop layer, thereby exposing a portion of the substrate;
- depositing a spacer layer covering bottom and interior walls of the recess, and the exposed first and second S/D regions;
- and
- etching back the spacer layer to form a spacer on each wall of the recess.
4 more elements
A method for fabricating local interconnects, the method comprising:
- providing a substrate having a first source/drain (S/D) region and a second S/D region laterally formed on the substrate, wherein the second S/D region is adjacent to the first S/D region and isolated from the first S/D region by an isolation region;
- depositing an interlayer dielectric (ILD) layer covering the first S/D region, the second S/D region and the isolation region;
- coating a resist layer over the ILD layer;
- creating an opening in the resist layer;
- etching away the ILD layer via the opening to expose the first and second S/D regions, wherein a recess having a depth of h is simultaneously produced in the isolation region;
- stripping the resist layer;
- depositing a spacer layer covering bottom and interior walls of the recess, and the exposed first and second S/D regions;
- and
- etching back the spacer layer to form a spacer on each wall of the recess.
6 more elements
Dependencies are inferred from the claim text.