Mask ROM cell and method of fabricating the same
AssigneeLG Semicon Co., Ltd.
InventorJin Soo Kim
Life of this patent
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Abstract
Mask ROM cell and method of fabricating the same, is disclosed, including a semiconductor substrate of a first conductivity type, a plurality of impurity diffusion regions of a second conductivity type, formed in the semiconductor substrate in one direction, having a predetermined distance therebetween, an insulating layer formed on a portion of the semiconductor substrate, corresponding to each impurity diffusion region, a gate insulating layer formed on the semiconductor substrate, and a plurality of conductive lines formed on the gate insulating layer and insulating layer in a predetermined interval, being perpendicular to the impurity diffusion regions.
Claims12
A mask ROM cell, comprising:
- a semiconductor substrate of a first conductivity type;
- a plurality of impurity diffusion regions of a second conductivity type, formed in the semiconductor substrate in one direction, having a predetermined distance therebetween;
- an insulating layer formed on a portion of the semiconductor substrate, corresponding to each impurity diffusion region;
- a gate insulating layer formed on the semiconductor substrate;
- and
- a plurality of conductive lines formed on the gate insulating layer and the insulating layer in a predetermined interval, being perpendicular to the impurity diffusion regions.
A method of fabricating a mask ROM cell, comprising the steps of:
- preparing a semiconductor substrate of a first conductivity type;
- forming a plurality of impurity diffusion regions of a second conductivity type in the semiconductor substrate in one direction, having a predetermined distance therebetween;
- forming an insulating layer on a portion of the semiconductor substrate, corresponding to each impurity diffusion region;
- forming a gate insulating layer on the semiconductor substrate;
- and
- forming a plurality of conductive lines on the gate insulating layer and insulating layer in a predetermined interval, the gate lines being perpendicular to the impurity diffusion regions.
Dependencies are inferred from the claim text.