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US 2003/0111626 A1Published application
Magnetic memory device having magnetic shield layer, and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorKeiji Hosotani
Life of this patent
Estimating the term…
Abstract
A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on the memory element and run in a second direction different from the first direction, and a first magnetic shield layer which is formed on the side surface of each second wiring layer and formed around the side surface of the memory element.
Claims49
A magnetic memory device comprising:
- a first wiring layer which runs in a first direction;
- a memory element which is arranged above the first wiring layer;
- second wiring layers which are arranged on the memory element and run in a second direction different from the first direction;
- and
- a first magnetic shield layer which is formed on a side surface of said each second wiring layer and formed around a side surface of the memory element.
2 more elements
A magnetic memory device manufacturing method, comprising:
- forming a first wiring layer which runs in a first direction;
- selectively forming a memory element above the first wiring layer;
- forming a first insulating layer around the memory element;
- forming, on the first insulating layer and the memory element, second wiring layers which run in a second direction different from the first direction;
- removing a portion of the first insulating layer not covered with the second wiring layers by using the second wiring layers as a mask;
- and
- forming a first magnetic shield layer over the second wiring layers to cover the first and second wiring layers and the memory element.
4 more elements
A magnetic memory device manufacturing method, comprising:
- forming a first wiring layer which runs in a first direction;
- forming above the first wiring layer a straight memory element which runs in the first direction;
- forming a first insulating layer around the memory element;
- forming, on the first insulating layer and the memory element, second wiring layers which run in a second direction different from the first direction;
- removing portions of the first insulating layer and the memory element which are not covered with the second wiring layers by using the second wiring layers as a mask to form the memory element into an island shape;
- and
- forming a first magnetic shield layer over the second wiring layers.
4 more elements
Dependencies are inferred from the claim text.