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US 2003/0082902 A1Published application
Semiconductor-device fabrication method
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsShoichi Fukui, Takeru Matsuoka
Life of this patent
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Abstract
A semiconductor-device fabrication method includes a step of forming a contact hole in a semiconductor substrate 1 and a step of forming a conductive contact hole. The step of forming the contact hole is performed by repeating two times or more a burying step of depositing a conductive material 5 to bury the conductive material in the contact hole and an etch-back step of removing the conductive material around the contact hole by etch back.
Claims8
A semiconductor-device fabrication method comprising:
- forming a contact hole in a semiconductor substrate;
- and
- forming a conductive contact hole by repeating two times or more a burying step of depositing a conductive material to bury the conductive material in the contact hole and an etch-back step of removing the conductive material around the contact hole etch back.
Dependencies are inferred from the claim text.