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US 2003/0080435 A1Published application
Shapes-based migration of aluminum designs to copper damascene
AssigneeInternational Business Machines Corporation
InventorsTimothy G. Dunham, Ezra D. B. Hall, Howard S. Landis, Mark A. Lavin, William C. Leipold
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Abstract
An interconnect structure for use in semiconductor devices which interconnects a plurality of dissimilar metal wiring layers, which are connected vias, by incorporating shaped voids in the metal layers. The invention also discloses a method by which such structures are constructed.
Claims13
An electronic circuit comprising:
- a semiconductor substrate;
- an oxide of said semiconductor substrate positioned on said semiconductor substrate, said oxide having at least one cavity therein exposing a portion of said semiconductor substrate;
- a metal layer positioned on said semiconductor substrate within said at least one cavity;
- a plurality of cavities within said metal layer, each cavity having a layer of said oxide of said substrate positioned therein.
1 more element
An electronic circuit comprising:
- a semiconductor substrate;
- a first metal conductor on said semiconductor substrate;
- a second metal conductor on said semiconductor substrate;
- and
- a plurality of metal forms on the same level as said first and said second metal conductors, said plurality of metal forms insulated from said first and second metal conductors.
2 more elements
A method of manufacturing an electronic circuit comprising:
- providing a semiconductor substrate;
- providing an oxide of said semiconductor substrate positioned on said semiconductor substrate, said oxide having at least one cavity therein exposing a portion of said semiconductor substrate;
- providing a metal layer, said metal layer positioned on said semiconductor substrate within said at least one cavity;
- providing a plurality of cavities within said metal layer, each cavity having a layer of said oxide of said substrate positioned therein.
1 more element
Dependencies are inferred from the claim text.