Semiconductor device

A multilayer interconnection semiconductor device provided with both wiring made of Al or an Al alloy layer and wiring mainly made of a Cu conductive layer on the same substrate, wherein:

• a wiring layer made of Al or the Al alloy layer is used for a layer including wiring having form in which the respective resistivities ρ of both wirings have the relation of ρAl<ρCu;
• and
• a wiring layer mainly made of the Cu conductive layer is used for a layer including only wiring having form in which the respective resistivities ρ of both wirings have the relation of ρAl≧ρCu.

A semiconductor device provided with both wiring made of Al or an Al alloy layer and wiring mainly made of a Cu conductive layer on the same substrate wherein:

• wiring having form that the thickness t of the wiring is smaller than 0.05 μm (t<0.05 μm) and the width w of the wiring is smaller than 0.11 μm (w<0.11 μm) is made by Al or the Al alloy layer.

A multilayer interconnection semiconductor device provided with both wiring made of Al or an Al alloy layer and wiring mainly made of a Cu conductive layer on the same substrate, wherein:

• a wiring layer including wiring having form that the thickness t of the wiring is smaller than 0.05 μm (t<0.05 μm) and the width w of the wiring is smaller than 0.11 μm (w<0.11 μm) is formed by a wiring layer made of Al or the Al alloy layer.

A semiconductor device provided with both wiring made of Al or an Al alloy layer and wiring mainly made of a Cu conductive layer on the same substrate, wherein:

• wiring having form that the thickness t of the wiring is equal to or larger than 0.05 μm and is smaller than 0.10 μm (0.05 μm<t<0.10 μm) and the width w of the wiring is smaller than 0.11 μm (w<0.11 μm) is formed by wiring made of Al or the Al alloy layer.

A multilayer interconnection semiconductor device provided with both wiring made of Al or an Al alloy layer and wiring mainly made of a Cu conductive layer on the same substrate, wherein:

• a wiring layer including wiring having form that the thickness t of the wiring is equal to or larger than 0.05 μm and is smaller than 0.10 μm (0.05 μm≦t<0.10 μm) and the width w of the wiring is smaller than 0.11 μm (w<0.11 μm) is formed by a wiring layer made of Al or the Al alloy layer.

A semiconductor device provided with both wiring made of Al or an Al alloy layer and wiring mainly made of a Cu conductive layer on the same substrate, wherein:

• wiring having form that the width w of the wiring is smaller than 0.08 μm (w<0.08 μm) is formed by wiring made of Al or the Al alloy layer.

A multilayer interconnection semiconductor device provided with both wiring made of Al or an Al alloy layer and wiring mainly made of a Cu conductive layer on the same substrate, wherein:

• a wiring layer including wiring having form that the width w of the wiring is smaller than 0.08 μm (w<0.08 μm) is formed by a wiring layer made of Al or the Al alloy layer.