Method and structure for thru-mask contact electrodeposition
AssigneeNutool, Inc.
InventorsCyprian Uzoh, Bulent M. Basol, Homayoun Talieh
Life of this patent
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Abstract
A process for forming a conductive structure on a substrate is provided. The substrate has a copper seed layer that is partially exposed through a plurality of openings in a masking layer such as a photoresist. The masking layer is formed on the seed layer layer. The process electroplates copper through the openings and onto the seed layer. During the copper electroplating process the surface of the masking layer is mechanically swept. The process forms planar conductive material deposits filling the plurality of holes in the masking layer. The upper ends of the conductive deposits are substantially co-planar.
Claims49
A process for forming a conductive structure on a substrate having a conductive layer that is partially exposed through a plurality of openings in a masking layer that is formed on the conductive layer, the process comprising the steps of:
- electroplating a conductive material through the openings and onto the conductive layer;
- and
- continuing electroplating while mechanically sweeping top surface of the masking layer thereby forming planar conductive material deposits filling the plurality of holes wherein upper ends of the conductive deposits are substantially co-planar.
A process for forming a conductive structure on a substrate having a conductive layer that is partially exposed through a plurality of openings of a masking layer that is formed on the conductive layer, the process comprising:
- electroplating a conductive material within the openings and onto the conductive layer while mechanically sweeping the masking layer thereby forming planar conductive material deposits filling the plurality of holes wherein upper ends of the conductive deposits are substantially co-planar.
A process for forming a conductive structure on a substrate having a conductive layer that is partially exposed through a plurality of openings of a masking layer that is formed on the conductive layer, the process comprising:
- electroplating a conductive material within the openings and onto the conductive layer while controlling the mass transfer of conductive material ions thereby forming planar conductive material deposits filling the plurality of holes wherein upper ends of the conductive deposits are substantially co-planar.
A process for forming a conductive structure on a substrate comprising a conductive layer, the process comprising the steps of:
- depositing on the conductive layer a masking layer and patterning the masking layer for forming a plurality of openings exposing the conductive layer;
- electroplating a conductive material within the openings of the masking layer and thereby fully filling some of the opening while partially filling the rest of the openings;
- continuing electroplating while mechanically sweeping the masking layer such that a rate of deposition to be higher into the partially filled openings than into the fully filled openings thereby fully filling the plurality of holes with planar metal deposits;
- stripping the remaining masking layer;
- and
- etching the exposed conductive layer not covered by the electroplated metal.
The process of claim of 30, wherein some portion of the masking layer is removed, and the conductive layer under the removed mask layer is also removed.
The process of claim of 30, wherein remaining portions of the masking layer adjacent to the planar metal deposits are not removed.
The process of claim of 31, wherein an air gap separates the remaining masking layer adjacent the planar metal deposits.
The process of claim of 32, wherein a low-k material is deposited in the air gap and the excess low-k material is removed.
The process of claim of 32, wherein a high-k material is deposited in the air gap and the excess high-k material is removed.
The process of claim of 30, wherein after removal of a portion of the masking material, a low-k material is deposited to fill the air gap between the remaining masking layer and the excess low-k material is removed.
The process of claim of 30, wherein after removal of portion of the masking layer, a high-k material is deposited to fill the gap between the remaining masking layer and the excess high-k material is removed.
A process for forming a conductive structure on a substrate comprising a conductive layer, the process comprising the steps of:
- depositing on the conductive layer a masking layer and patterning the masking layer for forming a plurality of openings exposing the conductive layer;
- electroplating a conductive material within the openings of the masking layer and thereby fully filling some of the opening while partially filling the rest of the openings;
- continuing electroplating while mechanically sweeping the masking layer such that a rate of deposition to be higher into the partially filled openings than into the fully filled openings thereby fully filling the plurality of holes with planar metal deposits;
- stripping the remaining masking layer;
- etching the exposed conductive layer not covered by the electroplated metal;
- and
- coating the electroplated metal with a barrier material.
The process of claim of 39, wherein the conductive material is copper or copper alloy.
The process of claim of 39, wherein the conductive material is a silver alloy.
The process claim of 39, wherein a barrier layer is deposited on the planar metal deposits by electroless deposition methods.
The process claim of 42, wherein the barrier layer is cobalt phosphorus alloy.
The process claim of 43, wherein the barrier layer is coated with a passivating layer.
The process claim of 44, wherein the passivating layer is nickel or nickel alloy.
The process claim of 44, wherein the passivating layer is a gold coated nickel or alloy.
Dependencies are inferred from the claim text.