Structure with through hole, production method thereof, and liquid discharge head
AssigneeCanon Kabushiki Kaisha
InventorsYukihiro Hayakawa, Genzo Monma, Masato Kamiichi
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Abstract
A structure is constructed with a through hole in a substrate of silicon or the like by the decreased number of steps in production and with improved reliability. A silicon nitride film 104 is formed in contact with an upper surface of a silicon oxide film 103 at least in a side portion of a through hole 120, thereby improving step coverage of the silicon nitride film 104. The silicon oxide film 103 and silicon nitride film 104 function as a membrane during formation of the through hole 120 by etching from the back side of substrate 100.
Claims12
A structure comprising a semiconductor substrate, a silicon oxide film and a silicon nitride film provided on a first principal surface of said semiconductor substrate, and a through hole penetrating said semiconductor substrate, said silicon oxide film, and said silicon nitride film,
- wherein said silicon nitride film is formed in contact with an upper surface of said silicon oxide film at least in a side portion of said through hole.
A method of producing a structure comprising a semiconductor substrate, a silicon oxide film and a silicon nitride film provided on a first principal surface of said semiconductor substrate, and a through hole penetrating said semiconductor substrate, said silicon oxide film, and said silicon nitride film, said method comprising:
- a step of forming a sacrificial layer on the first principal surface of said semiconductor substrate, corresponding to a forming position of said through hole;
- a step of forming said silicon oxide film so as to cover the whole of said sacrificial layer and said first principal surface;
- a step of forming said silicon nitride film on an upper surface of said silicon oxide film;
- and
- a step of etching said semiconductor substrate from a second principal surface side of said semiconductor substrate to remove said sacrificial layer, said silicon oxide film, and said silicon nitride film, thereby forming the through hole.
A liquid discharge head comprising:
- a substrate, said substrate comprising a semiconductor substrate, a silicon oxide film and a silicon nitride film provided on a first principal surface of said semiconductor substrate, a heating resistor, and a supply opening penetrating said semiconductor substrate, said silicon oxide film, and said silicon nitride film and adapted to supply a liquid;
- and a discharge opening provided so as to face said heating resistor,
- wherein said silicon nitride film is formed in contact with an upper surface of said silicon oxide film at least in a side portion of said supply opening.
Dependencies are inferred from the claim text.