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AssigneesHitachi, Ltd., Nippon Tokushu Kent Co., Ltd.
InventorsSoichi Katagiri, Ui Yamaguchi, Seiichi Kondo, Kan Yasui, Masahiro Kaise, Minoru Honda
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The invention provides a method for manufacturing a semiconductor device with reduced dishing and erosion. In this method for manufacturing a semiconductor device, the convex/concave pattern is planarized by relatively moving a substrate having the convex/concave pattern on the surface and a polishing tool with pressing the convex/concave surface of the substrate on the polishing tool. The polishing tool is provided with a grindstone 10 having a plurality of polygonal segments 20, which comprises abrasive 23 that is bonded together with resin 24 and contains pores 22. The polygonal segments are arranged so that corners of three or more polygonal segments are not located near each other.
A method for manufacturing a semiconductor device comprising:
A method for manufacturing a semiconductor device for planarizing convex/concave pattern by means of relative motion between a polishing tool and a substrate having the convex/concave pattern on the surface on which at least a portion of a semiconductor element is formed with pressing the convex/concave pattern on the polishing tool, wherein the polishing tool comprises a grind stone provided with a plurality of arranged polygonal segments that are smaller than the substrate and that are arranged so that corners of three or more polygonal segments are not located near each other.
An apparatus for manufacturing a semiconductor device provided with:
16 The apparatus for manufacturing a semiconductor device according to claim 14, wherein the porosity of the grindstone is in a range from 35 to 75%, the compression elastic modulus of the grindstone is in a range from 200 MPa to 3 GPa, the tensile breaking elongation of the grindstone is in a range from 0.2 to 1.5%, and the tensile breaking strength of the grindstone is in a range from 0.5 to 5 MPa.
An apparatus for manufacturing a semiconductor device provided with:
Dependencies are inferred from the claim text.