Stacked film, insulating film and substrate for semiconductor

A method for the production of a stacked film, which comprises forming (A) a film of an organic compound having a carbon content of 60% by weight or more on a substrate containing Si and further containing at least one element selected from the group consisting of O, C, N and H;

• and forming, on the film (A), (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of compounds represented by the following general formulae (51) to (54):
• HSi(OR51)3 (51)
• wherein R51 represents a monovalent organic group,
• Ra′Si(OR52)4-a′ (52)
• wherein R represents a fluorine atom or a monovalent organic group;
• R52 represents a monovalent organic group;
• and a′ represents an integer of from 1 to 2,
• Si(OR53)4 (53)
• wherein R53 represents a monovalent organic group, and
• R54b′(R55O)3-b′Si—(R58)d′—Si(OR56)3-c′R57c′ (54)
• wherein R54 to R57 may be the same or different and each represents a monovalent organic group;
• b′ and c′ may be the same or different and each represents a number of from 0 to 2;
• R58 represents an oxygen atom, a phenylene group, or a group represented by —(CH2)n′—, wherein n′ represents an integer of from 1 to 6;
• and d′ represents 0 or 1.