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AssigneeThe Regents of the University of California
InventorsConnie J. Chang-Hasnain, Pei-Cheng Ku
Estimating the term…
A variable semiconductor all-optical buffer and method of fabrication is provided where buffering is achieved by slowing down the optical signal using a control light source to vary the dispersion characteristic of the medium based on electromagnetically induced transparency (EIT). Photonic bandgap engineering in conjunction with strained quantum wells (QWs) and quantum dots (QDs) achieves room temperature operation of EIT. Photonic crystals are used to sharpen the spectral linewidths in a quantum well structure due to its density of states and in a quantum-dot structure caused by the inhomogeneity of the dot size, typically observed in state-of-the-art QD materials. The configuration facilitates monolithic integration of an optical buffer with an amplifier and control laser to provide advantages over other material systems as candidates for optical buffers.
An optical buffering device, comprising:
A semiconductor-based optical buffer, comprising:
A semiconductor-based optical buffer, comprising:
An optical buffering device, comprising:
An optical buffering device, comprising:
A method of fabricating a three-dimensional photonic crystal, comprising:
A three-dimensional Bragg cell, comprising:
A three-dimensional Bragg cell, comprising:
A three-dimensional Bragg cell, comprising:
An optical buffering device, comprising:
An optical buffering device, comprising:
An optical buffering device, comprising:
An optical buffering device, comprising:
An optical buffering device, comprising:
A semiconductor material, comprising:
A three-dimensional photonic crystal, comprising:
Dependencies are inferred from the claim text.