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US 2003/0075779 A1Published application
Semiconductor device and method for manufacturing the same
OwnerTakayuki Kitoinventor
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OwnerTakayuki Kitoinventor
Estimating the term…
A semiconductor device in which a transistor having a first conduction type collector layer, a second conduction type base layer and a first conduction type emitter layer is formed on a semiconductor substrate. The device includes an insulating layer formed on the semiconductor substrate and having a contact hole for connecting an electrode to the base layer, a diffusion source layer formed in the contact hole and containing an impurity for controllably imparting the second conduction type, and a high concentration region formed in the vicinity of a boundary surface between the base layer and the diffusion source layer in the base layer, the high concentration region being formed smaller in thickness than the base layer, containing the same kind of impurity as the impurity contained in the diffusion source layer, and having an impurity concentration higher than the average impurity concentration of the base layer.
A semiconductor device in which a transistor having a collector layer of a first conduction type, a base layer of a second conduction type and an emitter layer of the first conductive type are formed on a semiconductor substrate, comprising:
A method for manufacturing a semiconductor device by forming, on a semiconductor substrate, a transistor having a collector layer of a first conduction type, a base layer of a second conduction type and an emitter layer of the first conduction type, the method comprising steps of:
Dependencies are inferred from the claim text.