Monolithic inductance-enhancing integrated circuits, complementary metal oxide semiconductor (cmos) inductance-enhancing integrated circuits, inductor assemblies, and inductance-multiplying methods

Abstract

Monolithic inductance-enhancing integrated circuits, complementary metal oxide semiconductor (CMOS) inductance-enhancing integrated circuits, inductor assemblies, and inductance-multiplying methods are described. In one embodiment, a monolithic inductance-enhancing integrated circuit comprises a transistor supported by a bulk monocrystalline silicon substrate. An inductor assembly is supported by the substrate and operably connected with the transistor in an inductance-enhancing circuit configuration having a quality factor (Q) greater than 10. In another embodiment, a complementary metal oxide semiconductor (CMOS), inductance-enhancing integrated circuit includes a field effect transistor supported over a silicon-containing substrate and having a gate, a source, and a drain. A first inductor is received within an insulative material layer over the substrate, and is connected to the gate. A second inductor is received within the insulative material layer and is connected to the source. The first and second inductors are arranged in a feedback loop which incorporates the field effect transistor. In yet another embodiment, a monolithic substrate is provided having formed thereon integrated circuitry which is formed through complementary metal oxide semiconductor (CMOS) techniques and includes a field effect transistor and a pair of inductors. The transistor and inductor pair are arranged into a circuit configuration in which the field effect transistor can sample one of the pair of inductors and drive the other of the pair of inductors in a manner which effectively increases the inductance of the sampled inductor.

Dependencies are inferred from the claim text.