Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a via hole in an interlayer insulation film formed on a lower interconnect layer made of copper to expose a part of said lower interconnect layer;
• depositing a first barrier film on an inner surface of said via hole, the adherence between said first barrier film and said interlayer insulation film being strong;
• etching said first barrier film to remove said first barrier film positioned at a bottom surface of said via hole;
• depositing a second barrier film on an inner surface of said via hole, the adherence between said second barrier film and copper being strong;
• and
• forming copper within said via hole to form a copper via.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming an upper interconnect trench to a specific depth in an interlayer insulation film formed on a lower interconnect layer made of copper and further, partially opening said interlayer insulation film to form a via hole therein for exposing a part of said lower interconnect layer;
• depositing a first barrier film respectively on inner surfaces of said upper interconnect trench and said via hole, the adherence between said first barrier film and said interlayer insulation film being strong;
• etching said first barrier film to remove said first barrier film positioned at a bottom surface of said via hole;
• depositing a second barrier film respectively on inner surfaces of said upper interconnect trench and said via hole, the adherence between said second barrier film and copper being strong;
• and
• forming copper within said upper interconnect trench and said via hole to form said upper interconnect layer and said copper via in one step.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming an upper interconnect trench to a specific depth in an interlayer insulation film formed on a lower interconnect layer made of copper and further, partially opening said interlayer insulation film to form a via hole in said interlayer insulation film so as to expose a part of said lower interconnect layer;
• depositing a first barrier film on respective inner surfaces of said upper interconnect trench and said via hole, the adherence between said first barrier film and said interlayer insulation film being strong;
• etching said first barrier film to remove said first barrier film positioned at respective bottom surfaces of said upper interconnect trench and said via hole;
• depositing a second barrier film on respective inner surfaces of said upper interconnect trench and said via hole, the adherence between said second barrier film and copper being strong;
• and
• forming copper within said upper interconnect trench and said via hole to form an upper interconnect layer and a copper via in one step.