US 2003/0075730 A1 · Method of manufacturing MOSEFT and structure thereof

Abstract

A method of manufacturing an MOSFET. A substrate is provided. A trench is formed in the substrate. A sacrificial layer is formed to fill the trench. A doped semiconductive layer is formed over the substrate. The doped semiconductive layer is patterned to form a device region, wherein the device region spans the sacrificial layer to expose a portion of the sacrificial layer. The sacrificial layer is removed. A gate dielectric layer is formed on the surface of the trench and on the top surface and the bottom surface of the device region. A conductive layer is formed on the gate dielectric layer. The conductive layer is patterned to form a horizontal surround gate surrounding the device region. A source/drain region is formed in a portion of the substrate adjacent to the device region.

Claims37

Dependent claims

A MOSFET, comprising:

a substrate having a trench formed therein;
a doped semiconductive layer spanning the trench, wherein the doped semiconductive layer partially covers the trench;
a gate dielectric layer located on the surface of the trench, disposed on a top surface, a side surface and a bottom surface of the doped semiconductive layer;
a gate located on the gate dielectric layer, wherein the gate surrounds a portion of the doped semiconductive layer over the trench;
and
a source/drain region disposed within the substrate adjacent to the portion of the doped semiconductive layer surrounded by the gate.

3 more elements

Dependencies are inferred from the claim text.

Method of manufacturing MOSEFT and structure thereof

Life of this patent

Method of manufacturing MOSEFT and structure thereof

Life of this patent

Abstract

Claims37