Modified pad for copper/low-k

A method to fabricate a bonding pad structure including the steps of:

• providing a substrate having a top metal layer;
• the top metal layer being electrically connected to a lower metal layer by at least one metal via within a metal via area;
• substrate including a low-k dielectric layer at least between the lower metal layer and the top metal layer;
• forming an etch stop layer over the low-k dielectric layer and the top metal layer;
• forming an oxide layer over the etch stop layer;
• forming a passivation layer overlying the oxide layer;
• etching the passivation layer, the oxide layer, and the etch stop layer within the metal via area to form a trench exposing at least a portion of the top metal layer;
• forming a patterned, extended bonding pad with an underlying barrier layer, over the etched passivation layer and lining the trench;
• the extended bonding pad with underlying barrier layer each having a portion that extends over a peripheral planar area of the substrate adjacent the trench not within the metal via area;
• bonding a wire bond to the extended bonding pad at the peripheral planar area portion to form the bonding pad structure.

In a bonding pad structure having a substrate with a top metal layer exposed through an etched, trenched passivation layer overlying the substrate;

• the top metal layer being electrically connected to a lower metal layer within the substrate by at least one metal via within a metal via area;
• and a bonding pad formed over the exposed top metal layer and at least a portion of the etched passivation layer;
• the improvement comprising:
• extending the bonding pad over a peripheral planar area of the substrate adjacent the trench formed within the passivation layer that is not within the metal via area;
• and
• bonding a wire bond to the extended bonding pad at the peripheral planar area portion.