Multilayered diffusion barrier structure for improving adhesion property
AssigneeSimplus Systems Corporation
InventorsTue Nguyen, Tai Dung Nguyen
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AssigneeSimplus Systems Corporation
InventorsTue Nguyen, Tai Dung Nguyen
Estimating the term…
A method has been provided for improving the adhesion of copper to a nitrided metal diffusion barrier material, such as TiN, in an integrated circuit substrate. The method provided a multilayered diffusion barrier structure, comprising a conducting diffusion barrier layer and a poorly conducting adhesion-promoter layer in selected locations. The formation of a poorly conducting adhesion-promoter layer in selected locations permits the optimization of both contact resistance and adhesion property. The poorly conducting adhesion-promoter layer is formed either by the partial incorporation of oxygen into the diffusion barrier or by deposition in an oxygen ambient.
A method to form a multilayered diffusion barrier structure on an underlayer for improving adhesion between the underlayer and a subsequently deposited conducting layer while maintain electrical conduction to the subsequently deposited conducting layer, the method comprises the steps of:
A method to form a multilayered diffusion barrier structure on an underlayer for improving adhesion between the underlayer and a subsequently deposited conducting layer while maintain electrical conduction to the subsequently deposited conducting layer, the method comprises the steps of:
A multilayered diffusion barrier structure on a step underlayer for improving adhesion between the underlayer and a subsequently deposited conducting layer while maintain electrical conduction to the subsequently deposited conducting layer, the multilayered diffusion barrier structure comprises:
Dependencies are inferred from the claim text.