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US 2003/0073035 A1Published application
Gap forming pattern fracturing method for forming optical proximity corrected masking layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorRen-Guey Hsieh
Life of this patent
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Abstract
Within a charged particle beam exposure method for forming a patterned resist layer there is employed separating at least one adjacent pair of fractured pattern elements employed in forming a contiguous latent pattern within a blanket resist layer a gap. By employing the gap, a patterned resist layer formed incident to development of the blanket resist layer is formed with enhanced pattern fidelity and enhanced critical dimension control.
Claims17
A method for forming a patterned resist layer comprising:
- providing a substrate;
- forming over the substrate a blanket resist layer;
- exposing, while employing a charged particle beam method susceptible to a proximity effect, the blanket resist layer to form a charged particle beam exposed blanket resist layer having formed therein a contiguous latent pattern, wherein the charged particle beam method employs when forming the contiguous latent pattern a series of adjacent fractured pattern elements, further wherein at least one adjacent pair of the series of adjacent fractured pattern elements is separated by a gap;
- and
- developing the charged particle beam exposed blanket resist layer to form a patterned resist layer.
2 more elements
A method for forming a photomask comprising:
- providing a transparent substrate;
- forming over the transparent substrate a blanket masking layer;
- forming over the blanket masking layer a blanket resist layer;
- exposing, while employing a charged particle beam method susceptible to a proximity effect, the blanket resist layer to form a charged particle beam exposed blanket resist layer having formed therein a contiguous latent pattern, wherein the charged particle beam method employs when forming the contiguous latent pattern a series of adjacent fractured pattern elements, further wherein at least one adjacent pair of the series of adjacent fractured pattern elements is separated by a gap;
- developing the charged particle beam exposed blanket resist layer to form a patterned resist layer;
- and
- patterning the blanket masking layer to form a patterned masking layer while employing the patterned resist layer as a mask layer.
4 more elements
Dependencies are inferred from the claim text.