Loading patent…
AssigneeSony Corporation
InventorsHideo Yamanaka, Hisayoshi Yamoto, Yuichi Satou, Hajime Yagi
Estimating the term…
Single crystal silicon is graphoepitaxially grown using a step formed on a substrate as a seed by a catalyst PVD process or the like, and the obtained single crystal silicon layer is used for a dual gate type MOSTFT in an electro-optical apparatus such as a display section-peripheral driving circuit integration type LCD. A single crystal silicon thin film of high electron/hole mobility is formed into a film uniformly at a relatively low temperature, which enables to manufacture an active matrix substrate incorporated with a high performance driver and an electro-optical apparatus such as a thin film semiconductor device for display use using the same, enables to constitute an integrated structure including a display section comprising nMOS or pMOS TFT having an LDD structure of high switching characteristics and low leak current and a peripheral circuit comprising CMOS, nMOS or pMOS TFT or a combination thereof having a high driving performance, and can attain a display panel of high image quality, high fineness, narrow frame edge, high efficiency and enlarged screen area, and enables to use a large glass substrate with a relatively low distortion point, attain high productivity, cost down with no requirement of expensive manufacturing facilities and, further, and conduct easy control for the threshold value, making it possible for high speed operation by reducing the resistance.
An electro-optical apparatus having, on a first substrate, a display section in which pixel electrodes are disposed and a peripheral driving circuit section disposed at the periphery of the display section, in which a predetermined optical material is interposed between the first substrate and a second substrate, wherein,
A driving substrate for use in an electro-optical apparatus having, on a substrate, a display section in which pixel electrodes are disposed and a peripheral driving circuit section disposed to the periphery of the display section, wherein
A method of manufacturing an electro-optical apparatus having, on a first substrate, a display section in which pixel electrodes are disposed and a peripheral driving circuit section disposed at the periphery of the display section, wherein the method comprises
A method of manufacturing a driving substrate for use in an electro-optical apparatus having, on a substrate, a display section in which pixel electrodes are disposed and a peripheral driving circuit section disposed at the periphery of the display section, wherein the method comprises;
Dependencies are inferred from the claim text.