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US 2003/0071289 A1Published application
Multiple layer phase-change memory
AssigneeIntel Corporation
InventorsStephen J. Hudgens, Tyler A. Lowrey, Patrick J. Klersy
Life of this patent
Estimating the term…
Abstract
A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.
Claims30
A method comprising:
- forming a first layer of a phase-change material;
- forming a non-phase-change material over said first layer;
- and
- forming a second layer of a phase-change material over said non-phase-change material.
1 more element
A memory cell comprising:
- a first layer of a phase-change material;
- a second layer of a phase-change material;
- and
- a non-phase-change material between said first and second layers.
1 more element
A memory cell comprising:
- a first layer of a phase-change material;
- and
- a second layer of a phase-change material, only one of said first and second layers of phase-change material being programmable.
The cell of claim of 21 wherein said first layer of phase-change material is made of a chalcogenide material.
Dependencies are inferred from the claim text.