Topside active optical device apparatus and method
AssigneeXanoptix, Inc.
InventorsTom Faska, Greg Dudoff
Life of this patent
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Abstract
A method of integrating a topside optical device, having electrical contacts on a top side, with an electronic chip having electrical contacts on a connection side, involves creating a trench, defined by a wall, from the top side of a wafer containing the topside optical device into a substrate of the wafer, making a portion of the wall conductive by applying a conductive material to the portion; and thinning the substrate to expose the conductive material.
Claims5
A method of integrating a topside optical device, having electrical contacts on a top side, with an electronic chip having electrical contacts on a connection side, the method comprising:
- creating a trench, defined by a wall, from the top side of a wafer containing the topside optical device into a substrate of the wafer;
- making a portion of the wall conductive by applying a conductive material to the portion;
- and
- thinning the substrate to expose the conductive material.
A method of creating a self aligning topside optical device that can be joined to another device by comprising:
- creating a trench, defined by a wall, in a topside optical device on a wafer, the topside optical device having electrical contacts on a top side, from the top side of the wafer into a substrate of the wafer;
- making a portion of the wall conductive by applying a conductive material to the portion;
- and
- thinning an outer surface of the substrate until an opening is formed in the conductive material connecting the outer surface with the trench.
An integrated device comprising:
- a topside active optical device formed on a wafer, the wafer including a substrate having a first thickness at a time when the topside active optical device is formed, the topside active optical device having an electrical contact on a top side;
- an electronic chip having electrical contacts on a connection side;
- a wall defining a trench extending from the top side of the wafer containing the topside optical device into the substrate of the wafer;
- a conductive material on a portion of the wall extending from the electrical contact on the top side to one contact on the connection side of the electronic chip establishing an electrically conductive path therebetween, and wherein the substrate of the integrated device has an integration thickness less than the first thickness when the electrically conductive path is established.
A self aligning topside optical device for integration with an other device comprising:
- a wall defining a trench in a wafer having a topside optical device thereon, the topside optical device having an electrical contact on a top side, the trench extending from the top side of the wafer through a substrate of the wafer to define an opening on an external surface of the substrate;
- and
- a conductive material located on at least a portion of the wall, so that when a device contact on the other device has a solder material thereon and the solder material is brought into contact with the opening and the softened, at least some of the solder will flow into the opening and align the opening with the contact and form an electrically conductive path between the electrical contact and the device contact.
Dependencies are inferred from the claim text.