Solid-state image sensor, production method of the same, and digital camera

A solid-state image sensor comprising:

• a valid cell area wherein a plurality of valid cells are placed, said valid cells having a light-receiving part and a color filter placed in an on-chip fashion to correspond to said light-receiving part, and outputting a charge signal, wherein:
• said color filter placed in the peripheral part of said valid cell area has the center offset in the direction to the center of the valid cell area with respect to the center of said light-receiving part;
• and
• said light-receiving parts and said color filters are respectively placed in their predetermined pitches, the pitch said light-receiving parts are placed in being greater than the pitch said color filters are placed in.

A solid-state image sensor comprising:

• a valid cell area wherein a plurality of valid cells are placed, said valid cells having a light-receiving part placed and an aperture reserved to correspond to said light-receiving part, and outputting a charge signal, wherein:
• said aperture reserved at the peripheral part of said valid cell area has the center offset in the direction to the center with respect to the center of said light-receiving part;
• and
• said light-receiving parts are respectively placed and said apertures are respectively reserved in their predetermined pitches, the pitch said light-receiving parts are placed in being greater than the pitch said aperture is reserved at.

A digital camera comprising an optical system including an iris, and a solid-state image sensor, wherein:

• said solid-state image sensor comprises a valid cell area wherein a plurality of valid cells are placed, said valid cell having a light-receiving part and a color filter placed in an on-chip fashion to correspond to said light-receiving part, and outputting a charge signal, in which
• said valid cell further has a light blocking layer having an aperture corresponding to said light-receiving part;
• said color filter placed in the peripheral part of said valid cell area has the center offset in the direction to the center with respect to the center of said light-receiving part;
• said light-receiving part and said color filter are placed in their respective predetermined pitches, the pitch said light-receiving parts are placed in being greater than the pitch said aperture is reserved at;
• said aperture of said valid cell reserved at the peripheral part of said valid cell area has the center offset in the direction to the center of said valid cell area with respect to the center of said light-receiving part;
• said apertures are reserved at a predetermined pitch which is smaller than the pitch said light-receiving parts are placed in and greater than the pitch of said color filters are placed in;
• when the offset between the center of said light-receiving part and the center of said micro-lens is Sm, the offset between the center of said light-receiving part and the center of said color filter placed in said valid cell is SOCF, the offset between the center of said light-receiving part placed in said valid cell and the center of said aperture reserved at said valid cell is SOPN, total thickness of layers between said light-receiving part and the layer on which said micro-lens is fitted is d1, thickness of layer(s) between said light-receiving part and said color filter is d2, and thickness of layer(s) between said light-receiving part and said aperture is d3,
• each said thickness of layer(s) fulfills the relation SOPN<SOCF<Sm;
• and
• when the refractive index of the layers placed underneath said micro-lens is n,
• said optical system has an eye-relief of 1, and the height of the image is p in said photodetecting cell of aforementioned solid-state image sensor, at least one of
• 0.7×d1×tan θ≦Sm≦1.3×d1×tan θ, 0.7×d2×tan θ≦SOCF≦1.3×d2×tan θ, and 0.7×d3×tan θ≦SOPN≦1.3×d3×tan θ is satisfied,
• and
• sin θ=p/[n×(p2+12)½] is satisfied.

A digital camera comprising:

• a camera lens;
• and
• a solid-state image sensor, having:
• a plurality of photovoltaics arrayed on the main side of a semiconductor substrate, to form a valid cell area made of a plurality of valid cells;
• and
• penetration adjusting means, for adjusting the optical penetrating amount of the said incident light according to the position of said photovoltaics in said valid cell area, placed on the incident side of said photovoltaics, and placed between said solid-state image sensor and said camera lens.