Back to results
US 2003/0070618 A1Published application
Apparatus and process of improving atomic layer deposition chamber performance
AssigneeMicron Technology, Inc.
InventorsPhilip H. Campbell, David J. Kubista
Life of this patent
Estimating the term…
Abstract
An apparatus and process for atomic layer deposition that minimizes mixing of the chemicals and reactive gases is disclosed. The first precursor and second precursor are only mixed with other chemicals and reactive gases when and where desired by installing and monitoring a dispensing fore-line. Also, independent and dedicated chamber outlets, isolation valves, exhaust fore-lines, and exhaust pumps are provided that are activated for the specific gas when needed.
Claims23
An atomic layer deposition apparatus comprising:
- a process reactor chamber including a first precursor inlet, a second precursor inlet, and a chamber outlet;
- a first dispensing valve coupled to said first precursor inlet of said process reactor chamber;
- a second dispensing valve coupled to said second precursor inlet of said process reactor chamber;
- an exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said exhaust path includes an exhaust fore-line;
- and
- a dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said first dispensing valve and said second end is coupled to said exhaust path.
3 more elements
An atomic layer deposition apparatus comprising:
- a process reactor chamber including a first precursor inlet, a second precursor inlet, and a chamber outlet;
- a vapor supply coupled to said first precursor inlet;
- a first dispensing valve coupled to said first precursor inlet of said process reactor chamber;
- a second dispensing valve coupled to said second precursor inlet of said process reactor chamber;
- an exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said exhaust path includes an exhaust fore-line;
- and
- a dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said first dispensing valve and said second end is coupled to said exhaust path.
4 more elements
An atomic layer deposition apparatus comprising:
- a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet;
- a first dispensing valve coupled to said first precursor inlet of said process reactor chamber;
- a second dispensing valve coupled to said second precursor inlet of said process reactor chamber;
- an exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said exhaust path includes an exhaust fore-line;
- a dispensing fore-line comprising a first end and a second end;
- and
- a dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said dispensing fore-line is coupled to said first dispensing valve and said second end of said dispensing fore-line is coupled to said dispensing pump.
4 more elements
An atomic layer deposition apparatus comprising:
- a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet;
- a first dispensing valve coupled to said first precursor inlet of said process reactor chamber;
- a vapor supply coupled to said first precursor inlet;
- a second dispensing valve coupled to said second precursor inlet of said process reactor chamber;
- a first exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said first exhaust path includes an first exhaust fore-line;
- a dispensing fore-line comprising a first end and a second end;
- and
- a dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said dispensing fore-line is coupled to said first dispensing valve and said second end of said dispensing fore-line is coupled to said dispensing pump.
5 more elements
An atomic layer deposition apparatus comprising:
- a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet;
- a first dispensing valve coupled to said first precursor inlet of said process reactor chamber;
- a second dispensing valve coupled to said second precursor inlet of said process reactor chamber;
- a first exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said first exhaust path includes a first exhaust fore-line;
- a dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said dispensing valve and said second end is coupled to said first exhaust path;
- and
- a second exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said second exhaust path includes a second exhaust fore-line.
4 more elements
An atomic layer deposition apparatus comprising:
- a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet;
- a first dispensing valve coupled to said first precursor inlet of said process reactor chamber;
- a vapor supply coupled to said first precursor inlet;
- a second dispensing valve coupled to said second precursor inlet of said process reactor chamber;
- a first exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said first exhaust path includes a first exhaust fore-line;
- a dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said dispensing valve and said second end is coupled to said first exhaust path;
- and
- a second exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said second exhaust path includes a second exhaust fore-line.
5 more elements
An atomic layer deposition apparatus comprising:
- a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet;
- a first dispensing valve coupled to said first precursor inlet of said process reactor chamber;
- a second dispensing valve coupled to said second precursor inlet of said process reactor chamber;
- a first exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said first exhaust path includes a first exhaust fore-line;
- a dispensing fore-line comprising a first end and a second end;
- a dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said dispensing fore-line is coupled to said first dispensing valve and said second end of said dispensing fore-line is coupled to said dispensing pump;
- and
- a second exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said second exhaust path includes a second exhaust fore-line.
5 more elements
An atomic layer deposition apparatus comprising:
- a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet;
- a first dispensing valve coupled to said first precursor inlet of said process reactor chamber;
- a vapor supply coupled to said first precursor inlet;
- a second dispensing valve coupled to said second precursor inlet of said process reactor chamber;
- a first exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said first exhaust path includes a first exhaust fore-line;
- a dispensing fore-line comprising a first end and a second end;
- a dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said dispensing fore-line is coupled to said first dispensing valve and said second end of said dispensing fore-line is coupled to said dispensing pump;
- and
- a second exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said second exhaust path includes a second exhaust fore-line.
6 more elements
An atomic layer deposition apparatus comprising:
- a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet;
- a first dispensing valve coupled to said first precursor inlet of said process reactor chamber;
- a second dispensing valve coupled to said second precursor inlet of said process reactor chamber;
- a first exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said first exhaust path includes a first exhaust fore-line;
- a first dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said first dispensing valve and said second end is coupled to said first exhaust path;
- a second exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said second exhaust path includes a second exhaust fore-line;
- and
- a second dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said second dispensing valve and said second end is coupled to said second exhaust path.
5 more elements
An atomic layer deposition apparatus comprising:
- a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet;
- a first dispensing valve coupled to said first precursor inlet of said process reactor chamber;
- a vapor supply coupled to said first precursor inlet;
- a second dispensing valve coupled to said second precursor inlet of said process reactor chamber;
- a first exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said first exhaust path includes a first exhaust fore-line;
- a first dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said first dispensing valve and said second end is coupled to said first exhaust path;
- a second exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said second exhaust path includes a second exhaust fore-line;
- and
- a second dispensing fore-line comprising a first end and a second end, wherein said first end is coupled to said second dispensing valve and said second end is coupled to said second exhaust path.
6 more elements
An atomic layer deposition apparatus comprising:
- a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet;
- a first dispensing valve coupled to said first precursor inlet of said process reactor chamber;
- a second dispensing valve coupled to said second precursor inlet of said process reactor chamber;
- a first exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said first exhaust path includes a first exhaust fore-line;
- a first dispensing fore-line comprising a first end and a second end;
- a first dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said first dispensing fore-line is coupled to said first dispensing valve and said second end of said first dispensing fore-line is coupled to said first dispensing pump;
- a second exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said second exhaust path includes a second exhaust fore-line;
- a second dispensing fore-line comprising a first end and a second end;
- and
- a second dispensing pump coupled to said second dispensing valve by said second dispensing fore-line, wherein said first end of said second dispensing fore-line is coupled to said second dispensing valve and said second end of said second dispensing fore-line is coupled to said second dispensing pump.
7 more elements
An atomic layer deposition apparatus comprising:
- a process reactor chamber including a first precursor inlet, a second precursor inlet, a first chamber outlet, and a second chamber outlet;
- a first dispensing valve coupled to said first precursor inlet of said process reactor chamber;
- a vapor supply coupled to said first precursor inlet;
- a second dispensing valve coupled to said second precursor inlet of said process reactor chamber;
- a first exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber, wherein said first exhaust path includes an first exhaust fore-line;
- a first dispensing fore-line comprising a first end and a second end;
- a first dispensing pump coupled to said first dispensing valve by said dispensing fore-line, wherein said first end of said first dispensing fore-line is coupled to said first dispensing valve and said second end of said first dispensing fore-line is coupled to said first dispensing pump;
- a second exhaust path coupled to said reactor chamber configured to be selectively isolated from said reactor chamber;
- wherein said second exhaust path includes a second exhaust fore-line;
- a second dispensing fore-line comprising a first end and a second end;
- and
- a second dispensing pump coupled to said second dispensing valve by said second dispensing fore-line, wherein said first end of said second dispensing fore-line is coupled to said second dispensing valve and said second end of said second dispensing fore-line is coupled to said second dispensing pump.
9 more elements
Dependencies are inferred from the claim text.