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US 2003/0068960 A1Published application
Polymeric polishing pad having continuously regenerated work surface
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorsHeinz F. Reinhardt, John V. H. Roberts, Harry George McClain, William D. Budinger, Elmer William Jensen
Life of this patent
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Abstract
A polishing pad used in a method for polishing a semiconductor device is made by combining a polymeric matrix and a dissolvable substance that dissolves upon contact with a polishing slurry.
Claims51
A polishing pad, comprising:
- a polymeric matrix and a dissolvable substance for polishing a semiconductor device.
The polishing pad as recited in claim. 1, and further comprising:
- the dissolvable substance being dissolvable upon contact with a polishing slurry.
A polishing pad, comprising:
- a polymeric matrix and dissolvable microelements for polishing a semiconductor device.
A method of polishing a semiconductor device, comprising the steps of:
- polishing the semiconductor device with a polishing slurry and a polishing pad comprising, a polymeric matrix and a dissolvable substance located, both at a work surface of the polishing pad, and in a subsurface proximate the work surface, and
- dissolving the dissolvable substance at the work surface in the polishing slurry while polishing the semiconductor device, and
- wearing away the polishing pad while polishing the semiconductor device such that the subsurface becomes the work surface that polishes the semiconductor device.
A method of making a polishing pad for polishing a semiconductor device, comprising the steps of:
- mixing a dissolvable substance and a polymeric matrix while the polymeric matrix is of relatively low viscosity,
- increasing the viscosity to provide a polishing pad comprising, a work surface of the polishing pad and a subsurface proximate the work surface, and
- providing the dissolvable substance at the work surface for dissolution in a polishing slurry.
Dependencies are inferred from the claim text.