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AssigneeThe Hong Kong University of Science and Technology
InventorsMan Sun John Chan, Philip C.H. Chan, Wing Chung Victor Chan
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Semiconductor crystal grains are formed by metal-induced lateral crystallisation. The positions of the grain boundaries normal to the crystallisation direction are controlled, to position the grains correctly for subsequent formation of electronic devices within them. In a first technique, the grains are positioned by depositing the metal in short strips which each induce the crystallisation of a single corresponding grain. In a second technique, the grains are positioned by pre-patterning the amorphous silicon which is used to form the grains. Electronic circuit elements can be formed in each grain. The resultant structure can be used in a microelectronic mechanical system. Several grains can be formed successively and circuit elements formed in each layer to form a three-dimensional integrated circuit.
A method of forming semiconductor crystals on a surface, the method comprising:
A method of forming semiconductor crystals on a surface, the method comprising:
A method of forming an integrated circuit, the method comprising:
An integrated circuit comprising a layer formed on an insulating surface and containing a plurality of semiconductor crystal grains, the layer further including a plurality of electronic circuit elements formed within respective crystal grains.
An integrated circuit comprising a layer formed on an insulating surface and containing a plurality of semiconductor crystal grains, the layer further including at least one circuit element which has a plurality of sets of semiconductor regions, the regions of each set being electrically conducted to each other, and different ones of the crystal grains each containing one region of each set of regions.
Dependencies are inferred from the claim text.