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AssigneesUniversity of Southern California, The Trustees of Princeton University
InventorsMark E. Thompson, Xiaofan Ren, Vadim Adamovich, Steven R. Cordero, Brian Wendell D'Andrade, Bert Alleyne, Stephen R. Forrest
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Light emitting devices having blocking layers comprising one or more metal complexes are provided. The blocking layers may serve to block electrons, holes, and/or excitons. Preferably, the devices further comprise a separate emissive layer in which charge and/or excitons are confined. Metal complexes suitable for blocking layers can be selected by comparison of HOMO and LUMO energy levels of materials comprising adjacent layers in devices of the present invention.
A light emitting device comprising at least one blocking layer, wherein said blocking layer comprises at least one transition metal complex.
A light emitting device comprising at least one blocking layer, wherein said blocking layer comprises at least one metal complex comprising a main group metal atom having an atomic number greater than 13.
A light emitting device comprising at least one blocking layer, wherein said blocking layer comprises at least one metal complex comprising a main group metal atom, wherein said complex is six-coordinate.
A light emitting device comprising at least one blocking layer, wherein said blocking layer comprises at least one metal complex, and wherein said metal complex comprises aluminum and is not BAlq.
A light emitting device comprising a blocking layer, wherein said blocking layer comprises a wide band-gap organic matrix into which a metal complex is doped.
A light emitting device comprising at least one blocking layer comprising a compound of formula:
A light emitting device comprising an emissive layer and a hole blocking layer, each of said layers having an anode side and a cathode side, wherein said cathode side of said emissive layer is in contact with said anode side of said hole blocking layer, wherein said hole blocking layer has a lower HOMO energy level than the HOMO energy level of said emissive layer and comprises at least one transition metal complex.
A light emitting device comprising an emissive layer and a hole blocking layer, each of said layers having an anode side and a cathode side, wherein said cathode side of said emissive layer is in contact with said anode side of said hole blocking layer, wherein said hole blocking layer has a lower HOMO energy level than the HOMO energy level of said emissive layer and comprises at least one metal complex comprising a main group metal atom having an atomic number greater than 13.
A light emitting device comprising an emissive layer and a hole blocking layer, each of said layers having an anode side and a cathode side, wherein said cathode side of said emissive layer is in contact with said anode side of said hole blocking layer, wherein said hole blocking layer has a lower HOMO energy level than the HOMO energy level of said emissive layer and comprises at least one six-coordinate metal complex.
A light emitting device comprising an emissive layer and a hole blocking layer, each of said layers having an anode side and a cathode side, wherein said cathode side of said emissive layer is in contact with said anode side of said hole blocking layer, wherein said hole blocking layer has a lower HOMO energy level than the HOMO energy level of said emissive layer and comprises at least one metal complex comprising aluminum, wherein said metal complex is not BAlq.
A light emitting device comprising an emissive layer and an electron blocking layer, each of said layers having an anode side and a cathode side, wherein said anode side of said emissive layer is in contact with said cathode side of said electron blocking layer, wherein said electron blocking layer has a higher LUMO energy level than the LUMO energy level of said emissive layer and comprises at least one metal complex.
A light emitting device comprising an emissive layer and an exciton blocking layer, wherein said emissive layer is in contact with said exciton blocking layer, wherein said exciton blocking layer has a wider optical gap than the optical gap of said emissive layer, and wherein said exciton blocking layer comprises at least one metal complex.
A light emitting device having the structure anode/HTL/EL/HBL/ETL/cathode wherein said HBL comprises a wide band-gap organic matrix doped with a metal complex.
A light emitting device having the structure anode/HTL/EBL/EL/ETL/cathode wherein said EBL comprises a wide band-gap organic matrix doped with a metal complex.
A method of confining holes to an emissive layer in a light emitting device, wherein said emissive layer comprises an anode side and a cathode side, and wherein said device comprises a blocking layer adjacent to said cathode side of said emissive layer, wherein said blocking layer has a lower HOMO energy level than the HOMO energy level of said emissive layer and comprises at least one transition metal complex.
A method of confining holes to an emissive layer in a light emitting device, wherein said emissive layer comprises an anode side and a cathode side, and wherein said device comprises a blocking layer adjacent to said cathode side of said emissive layer, wherein said blocking layer has a lower HOMO energy level than the HOMO energy level of said emissive layer and comprises at least one metal complex comprising a main group metal atom having an atomic number greater than 13.
A method of confining holes to an emissive layer in a light emitting device, wherein said emissive layer comprises an anode side and a cathode side, and wherein said device comprises a blocking layer adjacent to said cathode side of said emissive layer, wherein said blocking layer has a lower HOMO energy level than the HOMO energy level of said emissive layer and comprises at least one six-coordinate metal complex.
A method of confining holes to an emissive layer in a light emitting device, wherein said emissive layer comprises an anode side and a cathode side, and wherein said device comprises a blocking layer adjacent to said cathode side of said emissive layer, wherein said blocking layer has a lower HOMO energy level than the HOMO energy level of said emissive layer and comprises at least one metal complex comprising aluminum, wherein said metal complex is not BAlq.
A method of confining electrons to an emissive layer in a light emitting device, wherein said emissive layer comprises an anode side and a cathode side, and wherein said device comprises a blocking layer adjacent to said cathode side of said emissive layer, wherein said blocking layer has a higher LUMO energy level than the LUMO energy level of said emissive layer and comprises at least one metal complex, said method comprising, applying a voltage across said device.
A method of confining excitons to an emissive layer in a light emitting device, wherein said emissive layer is in contact with said exciton blocking layer, wherein said exciton blocking layer has a wider optical gap than the optical gap of said emissive layer, and wherein said exciton blocking layer comprises at least one metal complex, said method comprising, applying a voltage across said device.
A method of fabricating a light emitting device, said method comprising depositing a blocking layer onto a preexisting layer wherein said blocking layer comprises a compound of formula:
A method of fabricating a light emitting device, said method comprising depositing a blocking layer onto a preexisting layer, wherein said blocking layer comprises a metal complex comprising iridium.
Dependencies are inferred from the claim text.