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US 2003/0067801 A1Published application
Magneto-resistive memory having sense amplifier with offset control
AssigneeMicron Technology, Inc.
InventorsYong Lu, Michael F. Dries
Life of this patent
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Abstract
A magneto-resistive memory is disclosed that includes a high-speed sense amplifier that can reliably operate at low signal levels. The sense amplifier includes offset cancellation to reduce or eliminate the internal offsets of the amplifier. The offset cancellation is controlled by one or more switches, which during operation, selectively enable the offset cancellation of the amplifier and store the offsets in one or more coupling capacitors.
Claims13
A magneto-resistive memory comprising:
- a memory cell configured to provide a differential output signal indicative of a magneto-resistive state of the memory cell;
- a differential amplifier coupled to receive the differential output signal and provide amplified differential output signals on a first output node and a second output node;
- a first capacitor coupled in series with the first output node;
- and
- a second capacitor coupled in series with the second output node.
2 more elements
A magneto-resistive memory comprising:
- a memory cell configured to provide a first differential output signal indicative of a magneto-resistive state of the memory cell;
- a first differential amplifier with a first input stage coupled to receive the first differential output signal and provide a first amplified differential output signal on a first output stage;
- a first capacitor stage interposed between the memory cell and the first input stage;
- and
- a second capacitor stage coupled in series with the first output stage.
2 more elements
Dependencies are inferred from the claim text.