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US 2003/0067009 A1Published application
Structure and method for electrical isolation of optoelectronic integrated circuits
AssigneeXerox Corporation
InventorsChristopher L. Chua, Philip D. Floyd, Thomas L. Paoli, Decai Sun
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Abstract
Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.
Claims2
An optoelectronic integrated circuit comprising:
- a first semiconductor device having a top surface and a bottom surface;
- a second semiconductor device having a first surface;
- and
- an oxidizable layer disposed between said bottom surface of said first semiconductor device and said first surface of said second semiconductor device, said oxidizable layer being penetrated by at least one hole extending from said top surface to said oxidizable layer.
1 more element
A method for making an optoelectronic integrated circuit comprising:
- providing a first semiconductor device having a top surface and a bottom surface;
- providing a second semiconductor device having a first surface;
- and
- providing an oxidizable layer disposed between said bottom surface of said first semiconductor device and said first surface of said second semiconductor device, said oxidizable layer being penetrated by at least one hole extending from said top surface to said oxidizable layer.
1 more element
Dependencies are inferred from the claim text.