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AssigneeTawain Semiconductor Manufacturing Co., Ltd.
InventorsChih-Yung Chang, Hsiang-Hsing Liu, Shiou Fieng-Chang Chien
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A method and system for reducing acidic contamination on a process wafer following a plasma etching process including; providing an ambient controlled heating chamber for accepting transfer of a process wafer under controlled ambient conditions; transferring the process wafer to the heating chamber under controlled ambient conditions following plasma etching of the process wafer; providing a heat exchange surface within the heating chamber for mounting the process wafer in heat exchange relationship thereto; mounting the process wafer on a heat exchange surface contained within the heating chamber; and, heating the process wafer to a temperature sufficient to vaporize an acidic residue thereon to form acidic vapors; and, removing the acidic vapors from the heating chamber.
A method for reducing acidic contamination on a process wafer following a plasma etching process comprising the steps of:
A heating chamber system for reducing acidic contamination on a process wafer following a plasma etching process comprising:
Dependencies are inferred from the claim text.