Method for surface treatment protecting metallic surface of semiconductor structure
AssigneeUnited Microelectronics Corp.
InventorsHsueh-Chung Chen, Teng-Chun Tsai, Yung-Tsung Wei
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Abstract
A method for surface treatment protecting a metallic semiconductor structure comprises providing a semiconductor structure with a metallic layer thereon. A protective layer on the metallic layer of the semiconductor structure and the protective layer comprises an metallic oxide layer. The present invention is particularly applied on the electrochemical copper surface of the semiconductor structure and a copper corrosion inhibitor BTA is used for formation of the protective layer. In particular, the present invention is applied on the steps of both pre and post-CMP.
Claims17
A method for surface treatment protecting a metallic semiconductor structure, said method comprising:
- providing a semiconductor structure with a metallic layer thereon;
- and
- forming a protective layer on said metallic layer of said semiconductor structure, said protective layer comprising an metallic oxide layer.
A method for surface treatment protecting a wafer with a metallic surface, said method comprising:
- providing a wafer with a metallic layer thereon;
- sensing existence of said wafer;
- treating surface of said wafer with an inhibitor-contained solution;
- and
- forming said protective layer by reaction of said inhibitor and said metallic layer.
Dependencies are inferred from the claim text.