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US 2002/0177305 A1Published application
Process of manufacturing semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorsToshiyuki Nakashima, Masahiro Shiota
Life of this patent
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Abstract
A process of manufacturing a semiconductor device including the steps of: filling a photoresist in a concave portion provided on a surface of a semiconductor substrate; forming a power-feeding thin metal film for electrolytic plating on the semiconductor substrate including a surface of the thus filled photoresist; and forming wiring on the power-feeding thin metal film in a region not above the concave portion by electrolytic plating.
Claims9
A process of manufacturing a semiconductor device comprising the steps of:
- filling a photoresist in a concave portion provided on a surface of a semiconductor substrate;
- forming a power-feeding thin metal film for electrolytic plating on the semiconductor substrate including a surface of the thus filled photoresist;
- and forming wiring on the power-feeding thin metal film in a region not above the concave portion by electrolytic plating.
Dependencies are inferred from the claim text.