Method for sealing via sidewalls in porous low-k dielectric layers
OwnerQing-Tang Jiang, Kenneth D. Brennaninventors
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Abstract
A method for completing an integrated circuit in the horizontal surface of a semiconductor substrate having interconnecting metal lines, comprising the steps of forming a dielectric layer over a said substrate; etching a substantially vertical hole into said dielectric layer so that it exposes one of said metal lines; depositing a barrier layer over said structure including within said hole, said barrier layer operable to seal said dielectric sidewalls of said structure; selectively removing said barrier layer from the bottom of said hole, thereby exposing said metal line; and forming a copper interconnect structure in said structure, contacting said metal line.
Claims25
A method for completing an integrated circuit in the horizontal surface of a semiconductor substrate having interconnecting metal lines, comprising the steps of:
- forming a dielectric layer over a said substrate;
- etching a substantially vertical hole into said dielectric layer so that it exposes one of said metal lines;
- depositing a barrier layer over said dielectric layer including within said hole, said barrier layer operable to seal said dielectric layer;
- selectively removing said barrier layer from the bottom of said hole, thereby exposing said metal line;
- and
- forming a copper interconnect structure in said hole, contacting said metal line.
A method of completing an integrated circuit in a semiconductor substrate having interconnecting metal lines, comprising the steps of:
- forming an interlevel dielectric layer over said substrate;
- forming an intrametal dielectric layer over said interlevel dielectric layer;
- etching a trench into said intrametal dielectric layer and a via within said trench into said interlevel dielectric layer;
- depositing a barrier layer within said trench and said via;
- selectively removing said barrier layer from the bottom of said via, thereby exposing said metal line;
- and
- forming a copper interconnect structure in said trench and said via, contacting said metal line.
Dependencies are inferred from the claim text.