Interconnects with dielectric spacers and method for forming the same

Abstract

A method and a structure of interconnects with dielectric spacers is disclosed. A semiconductor substrate with a plurality of interconnects is provided. A conformal first dielectric layer is formed on the interconnects and the substrate. The first dielectric layer is partially etched back to expose a partial surface of the substrate and the top surface of the interconnects, leaving remaining first dielectric layers on the sides of the interconnects, wherein the remaining first dielectric layers are spacers. A second dielectric layer is formed on the substrate, the spacers and the interconnects, and planarization is performed on the second dielectric layer. Thus, the spacers serve as etching stop layers and/or supporting layers of the interconnects.

Dependencies are inferred from the claim text.