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US 2002/0177264 A1Published application
Reducing threshold voltage roll-up/roll-off effect for MOSFETS
AssigneeInternational Business Machines Corporation
InventorsHiroyuki Akatsu, Satoshi Inaba, Ryota Katsumata, Cheruvu S. Murthy, Rajesh Rengarajan, Paul A. Ronsheim
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Abstract
MOSFETS are formed by implanting at least a portion of a semiconductor substrate with a depart of a first type to form a first well region, annealing the first well region, implanting the annealed first well region with nitrogen; forming a gate insulator above at least a portion of the first well region; and providing a gate electrode above the gate oxide and providing source/drain regions in the substrate below the gate oxide about the gate electrode.
Claims13
A method of forming a MOSFET, which comprises:
- (a) providing a semiconductor substrate,
- (b) implanting at least a portion of said substrate with a first dopant species of a first type form a first well region,
- (c) annealing the first well region,
- (d) implanting the annealed first well region with nitrogen,
- (e) after the nitrogen implantation, forming a gate insulator above at least a portion of the first well region , and
- (f) providing a gate electrode above the gate insulator and providing source/drain regions in the substrate below the gate insulator about the gate electrode.
3 more elements
Dependencies are inferred from the claim text.