US 2002/0177260 A1Published application

Semiconductor device and method of fabricating the same

OwnerKoichi Matsumotoinventor

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Abstract

The present invention provides a highly integrated semiconductor device including C-MOS transistors fabricated on a SOI substrate and a method of fabricating such semiconductor device. The semiconductor device comprises a plurality of first conductivity type impurity diffused regions formed in a semiconductor layer on a SOI substrate, a second conductivity type body region, a plurality of second conductivity type impurity diffused regions, a first conductivity type body region, a junction surface of one of the first conductivity type impurity diffused regions and one of the second conductivity type impurity diffused regions, a conductive (silicide) layer formed on at least one of the first conductivity type impurity diffused regions and one of the second conductivity type impurity diffused regions including the junction surface and a gate insulation film and the gate electrodes stacked on the first and second conductivity type body regions.

Claims19

Dependent claims

A semiconductor device comprising:

a substrate;
a buried insulation film formed on the substrate;
a semiconductor layer formed on the buried insulation layer;
a device isolation region formed on the buried insulation film in such a manner to surround said semiconductor layer;
a plurality of first conductivity type impurity diffused regions formed in said semiconductor layer;
a second conductivity type body region formed in said semiconductor layer between said first conductivity type impurity diffused regions;
a plurality of second conductivity type impurity diffused regions formed in said semiconductor layer;
a first conductivity type body region formed in said semiconductor layer between said second conductivity type impurity diffused regions;
a junction surface of one of said first conductivity type impurity diffused regions and one of said second conductivity type impurity diffused regions;
a conductive layer formed on at least one of said first conductivity type impurity diffused regions and one of said second conductivity type impurity diffused regions including said junction surface;
a gate insulation film formed on said first conductivity type body region and said second conductivity type body region;
and gate electrodes formed on said gate insulation film.

9 more elements

A method of fabricating semiconductor device comprising the steps of:

forming a silicon layer on a substrate by way of a buried insulation film;
forming a device isolation insulation region on the buried insulation film surrounding the semiconductor layer;
forming a first conductivity type body region in one part of the semiconductor layer;
forming a second conductivity type body region in one part of the semiconductor layer;
forming a gate insulation film on the first and second conductivity type body regions;
forming gate electrodes on the gate insulation film;
forming a plurality of first conductivity type impurity diffused regions in the semiconductor layer by way of the second conductivity type body region;
forming a plurality of second conductivity type impurity diffused regions in the semiconductor layer by way of the first conductivity type body region in such a manner that one of the first conductivity type impurity diffused regions and one of the second conductivity type impurity diffused regions contact to define a junction surface;
and
forming a conductive layer on at least one of the first conductivity type impurity diffused regions and one of the second conductivity type diffused regions including the junction surface.

7 more elements

Dependencies are inferred from the claim text.