US 2002/0177253 A1 · Process for making a high voltage NPN Bipolar device with improved AC performance

Abstract

A method of improving the speed of a heterojunction bipolar device without negatively impacting ruggedness of the device is provided. This method includes the steps of providing a structure that includes at least a bipolar device region, the bipolar device region comprising at least a collector region formed over a sub-collector region; and forming an n-type dopant region within the collector region, wherein the n-type dopant region has a vertical width that is less than about 2000 Å and a peak concentration that is greater than a peak concentration of the collector region. The present invention also provides a method of fabricating a heterojunction bipolar transistor device as well as the device itself which can be used in various applications including as a component for a mobile phone, a component of a personal digital assistant and other like applications wherein speed and ruggedness are required.

Claims44

Dependent claims

A method of fabricating a semiconductor device comprising the steps of:

(a) providing a collector having a first doping type, said collector comprising a sub-collector and a diffusion;
(b) providing the diffusion over said sub-collector, said diffusion having said first doping type;
(c) forming a base;
(d) forming an emitter;
and
wherein said diffusion has a vertical width sufficiently narrow to avoid lowering collector-base breakdown voltage and a doping sufficiently high to restrict base widening when the base-emitter junction is forward biased.

3 more elements

Dependencies are inferred from the claim text.

Process for making a high voltage NPN Bipolar device with improved AC performance

Life of this patent

Process for making a high voltage NPN Bipolar device with improved AC performance

Life of this patent

Abstract

Claims44