Method and apparatus for controlling feature critical dimensions based on scatterometry derived profile

A processing line, comprising:

• a processing tool for forming a feature on a semiconductor wafer in accordance with an operating recipe;
• a scatterometer adapted to receive the wafer, the scatterometer comprising:
• a light source adapted to illuminate the wafer;
• and
• a light detector adapted to measure light from the light source reflected off the wafer to generate a profile trace;
• and
• a process controller adapted to compare the profile trace to a target profile trace, and modify the operating recipe of the processing tool based on a deviation between the profile trace and the target profile trace.

A processing line comprising:

• means for forming a feature on a semiconductor wafer in accordance with an operating recipe;
• means for illuminating the wafer;
• means for measuring light from the illuminating means reflected off the wafer to generate a profile trace;
• means for correlating the profile trace to a historical profile trace, the historical profile trace having an associated feature profile;
• means for comparing the profile trace to a target profile trace;
• and
• means for modifying the operating recipe based on a deviation between the profile trace and the target profile trace.