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AssigneeSharp Laboratories of America, Inc.
InventorsSheng Teng Hsu, Fengyan Zhang, Tingkai Li
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A ferroelectric transistor gate structure with a ferroelectric gate and passivation sidewalls is provided. The passivation sidewalls serve as an insulator to reduce, or eliminate, the diffusion of oxygen or hydrogen into the ferroelectric gate. A method of forming the ferroelectric gate structure is also provided. The method comprises the steps of forming a sacrificial gate structure, removing the sacrificial gate structure, depositing passivation insulator material, etching the passivation insulator material using anisotropic plasma etching to form passivation sidewalls, depositing a ferroelectric material, polishing the ferroelectric material using CMP, and forming a top electrode overlying the ferroelectric material.
A ferroelectric transistor structure comprising:
A ferroelectric transistor structure comprising a ferroelectric gate having a bottom, sides and a top, overlying a semiconductor substrate, wherein the ferroelectric gate is encapsulated by the combination of a gate insulator on the bottom, passivation sidewalls on the sides, and a top electrode on the top.
A method of forming a ferroelectric transistor structure on a substrate comprising the steps of:
Dependencies are inferred from the claim text.