Proximity correction using shape engineering

A method for forming contact openings on a semiconductor substrate comprising the steps of:

• forming a photosensitive film over a substrate;
• providing an attenuated phase-shift photomask being generally flat and having opposed surfaces, said photomask having a pattern including a plurality of nonrectangular transmissive figures, each including a plurality of outwardly extending vertices;
• and
• exposing contact areas on said photosensitive film by positioning said photomask in fixed position with respect to said substrate and providing a light source opposite the surface of said photomask facing said substrate, each of said contact areas corresponding to a transmissive figure.

A method for generating an attenuated phase-shift mask, comprising the steps of:

• providing a photomask manufacturing tool;
• providing a computer electronically connected to said photomask manufacturing tool;
• providing a computer readable medium having stored thereon a set of instructions including instructions for generating an attenuated phase-shift photomask having a plurality of non-rectangular contact structures, each including a plurality of outwardly extending vertices and formed of a transmissive material, and;
• engaging said computer readable medium with said computer, thereby causing said computer to read said computer readable medium and communicate with said photomask manufacturing tool;
• and
• said computer electronically instructing said photomask manufacturing tool to generate said attenuated phase-shift photomask.

A method for generating an attenuated phase-shift mask, comprising the steps of:

• providing a photomask manufacturing tool;
• providing a computer electronically connected to said photomask manufacturing tool;
• providing a pattern generation tape having stored thereon a set of instructions including instructions for generating a pattern on an attenuated phase-shift photomask, the pattern including a plurality of non-rectangular contact structures, each including a plurality of outwardly extending vertices and formed of a transmissive material, and;
• engaging said pattern generation tape with said computer, thereby causing said computer to read said pattern generation tape and communicate with said photomask manufacturing tool;
• and
• said computer electronically instructing said photomask manufacturing tool to generate said attenuated phase-shift photomask including said pattern.