Method of enhancing photoresist anti-etching ability
AssigneeMacronix International Co., Ltd.
InventorChing-Yu Chang
Life of this patent
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Abstract
A method of enhancing photoresist anti-etching ability, at least includes follows. Provide a substrate, form a photoresist with a pattern on the substrate, put both photoresist and substrate in a low pressure environment, and treat photoresist by an electron beam to let at least part of photoresist is hardened. This method usually is performed before etch process, but the method also could be modified as follows. Expose photoresist by an electron beam while an etching process being performed, or alternately expose photoresist by an electron beam and perform an etch process
Claims17
A method of enhancing photoresist anti-etching ability, comprising:
- providing a substrate;
- forming a photoresist on said substrate, said photoresist having a pattern;
- putting both said photoresist and said substrate in a low pressure environment, such that said photoresist could be effectively treated by an electron beam;
- and
- treating said photoresist by said electron beam, so let at least part of said photoresist be hardened.
A method of etching with anti-etching photoresist, comprising:
- providing a substrate, wherein a patterned photoresist is located on said substrate;
- and
- simultaneously performing an electron beam expose process and an etch process, wherein said electron beam exposes process exposes said patterned photoresist and said etch process uses said patterned photoresist as a mask.
A method of etching with anti-etching photoresist, comprising:
- providing a substrate, wherein a patterned photoresist is located on said substrate;
- and
- alternately performing a plurality of electron beam expose processes and an a plurality of etch processes, wherein said electron beam expose processes exposes said patterned photoresist and said etch processes use said patterned photoresist as a mask.
Dependencies are inferred from the claim text.