Method to improve copper thin film adhesion to metal nitride substrates by the addition of water
AssigneeSharp Laboratories of America, Inc.
InventorsWei-Wei Zhuang, Sheng Teng Hsu, David R. Evans
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Abstract
A method of forming a copper thin film by chemical vapor deposition, includes introducing a wafer into a chemical vapor deposition chamber; humidifying helium gas with water to form a wet helium gas for use as the atmosphere in the chemical vapor deposition chamber; depositing a copper seed layer at a wet helium flow rate of between about 5.0 sccm and 20.0 sccm during a wafer temperature rise from ambient temperature to between about 150° C. to 230° C.; and depositing a copper thin film layer at a wet helium flow rate of between about 0.2 sccm to 1.0 sccm and at a temperature of between about 150° C. to 230° C.
Claims15
A method of forming a copper thin film by chemical vapor deposition, comprising:
- introducing a wafer into a chemical vapor deposition chamber;
- humidifying helium gas with water to form a wet helium gas for use as the atmosphere in the chemical vapor deposition chamber;
- depositing a copper seed layer at a wet helium flow rate of between about 5.0 sccm and 20.0 sccm during a wafer temperature rise from ambient temperature to between about 150° C. to 230° C.;
- and
- depositing a copper thin film layer at a wet helium flow rate of between about 0.2 sccm to 1.0 sccm and at a temperature of between about 150° C. to 230° C.
A method of forming a copper thin film by chemical vapor deposition, comprising:
- introducing a wafer into a chemical vapor deposition chamber;
- humidifying helium gas with water to form a wet helium gas for use as the atmosphere in the chemical vapor deposition chamber;
- depositing a copper seed layer at a wet helium flow rate of between about 5.0 sccm and 20.0 sccm during a wafer temperature rise from ambient temperature to between about 150° C. to 230C in about one minute, and providing a very slow copper precursor flow rate of between about 0.01 mL/min. to 0.05 nL/min.;
- and
- depositing a copper thin film layer at a wet helium flow rate of between about 0.2 sccm to 1.0 sccm and at a temperature of between about 150° C. to 230° C., and providing a copper precursor flow rate of between about 0.1 mL/min. to 0.5 mL/min.
A method of forming a copper thin film by chemical vapor deposition, comprising:
- introducing a wafer into a chemical vapor deposition chamber;
- humidifying helium gas with water to form a wet helium gas for use as the atmosphere in the chemical vapor deposition chamber;
- depositing a copper seed layer from a copper precursor having the chemical formula Cu(I)(hfac)L, where L=a ligand, and wherein hfac=hexafluoroacetylaceton, at a wet helium flow rate of between about 5.0 sccm and 20.0 sccm during a wafer temperature rise from ambient temperature to between about 150° C. to 230° C., wheren water vapor in the wet helium atmosphere replaces the stabilizer ligand of L during copper deposition;
- and
- depositing a copper thin film layer at a wet helium flow rate of between about 0.2 sccm to 1.0 sccm and at a temperature of between about 150° C. to 230° C.
Dependencies are inferred from the claim text.