Method for fabricating a hard mask
AssigneeInfineon Technologies AG
InventorMartin Gutsche
Life of this patent
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Abstract
The method is for producing a hard mask on a substrate, and in particular, on a primary area of a semiconductor substrate. The method includes the following steps: forming a first hard mask layer on the substrate; forming at least one additional hard mask layer on the first hard mask layer; structuring the additional hard mask layer in such a way that an area of the first hard mask layer is exposed; and structuring the first hard mask layer while using the additional hard mask layer as a mask so that an area of the substrate is exposed. Additional hard mask layers can be formed on the first hard mask layer. These hard mask layers are successively structured while using at least one overlying hard mask layer as a mask, until the area of the substrate is exposed.
Claims27
A method for fabricating a hard mask on a substrate, the method which comprises:
- a) forming a first hard mask layer on the substrate;
- b) creating a stack by forming a plurality of further hard mask layers on the first hard mask layer, the stack having a property that increases toward the substrate, the property selected from the group consisting of a thickness and an etching resistance;
- c) progressively patterning all, except a top one, of the plurality of the further hard mask layers using at least one overlying one of the further hard mask layers as a mask;
- and
- d) patterning the first hard mask layer using at least one of the plurality of the further hard mask layers as a mask such that a region of the substrate is uncovered.
A method for fabricating and using a hard mask, the method which comprises:
- fabricating the hard mask on a substrate by:
- forming a first hard mask layer on the substrate,
- creating a stack by forming a plurality of further hard mask layers on the first hard mask layer, the stack having a property that increases toward the substrate, the property selected from the group consisting of a thickness and an etching resistance,
- progressively patterning all, except a top one, of the plurality of the further hard mask layers using at least one overlying one of the further hard mask layers as a mask, and
- patterning the first hard mask layer using at least one of the plurality of the further hard mask layers as a mask such that a region of the substrate is uncovered;
- and
- using the hard mask for etching a structure selected from the group consisting of a target layer, multiple target layers, and the substrate.
A method for fabricating and using a hard mask, the method which comprises:
- fabricating the hard mask on a substrate by:
- forming a first hard mask layer on the substrate,
- creating a stack by forming a plurality of further hard mask layers on the first hard mask layer, the stack having a property that increases toward the substrate, the property selected from the group consisting of a thickness and an etching resistance,
- progressively patterning all, except a top one, of the plurality of the further hard mask layers using at least one overlying one of the further hard mask layers as a mask, and
- patterning the first hard mask layer using at least one of the plurality of the further hard mask layers as a mask such that a region of the substrate is uncovered;
- and
- using the hard mask for performing an etching selected from the group consisting of a contact hole etching, a deep trench etching, and an etching of a nonvolatile material.
A method for fabricating and using a hard mask, the method which comprises:
- fabricating the hard mask on a substrate by:
- forming a first hard mask layer on the substrate,
- creating a stack by forming a plurality of further hard mask layers on the first hard mask layer, the stack having a property that increases toward the substrate, the property selected from the group consisting of a thickness and an etching resistance, progressively patterning all, except a top one, of the plurality of the further hard mask layers using at least one overlying one of the further hard mask layers as a mask, and
- patterning the first hard mask layer using at least one of the plurality of the further hard mask layers as a mask such that a region of the substrate is uncovered;
- and
- using the hard mask for patterning an electrode structure required for a stacked capacitor when etching with a high aspect ratio in a material selected from the group consisting of polysilicon and SiO2.
Dependencies are inferred from the claim text.