Wiring layer dry etching method, semiconductor device manufacturing method, and semiconductor device obtained according to the method
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsKenji Kawai, Atsunori Nishiura, Ryoichi Yoshifuku
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Abstract
A wiring layer dry etching method is improved not to reduce electrical characteristics of a semiconductor device. A semiconductor substrate on which a mask for patterning a wiring layer is formed is prepared, in which mask is formed on wiring layer (a first step). Affected layers on a surface of the wiring layer are dry-etched and removed (second step). Wiring layer is dry-etched by using mask (third step). When shifting is performed from the second step to the third step, vacuuming is not performed, and continuous discharge is performed.
Claims12
A wiring layer dry etching method comprising:
- a first step of preparing a semiconductor substrate on which a mask for patterning a wiring layer is formed, the mask being formed on the wiring layer;
- a second step of dry-etching and removing affected layers on a surface of said wiring layer;
- and
- a third step of dry-etching said wiring layer by using said mask,
- wherein when shifting is performed from said second step to said third step, vacuuming is not performed, and continuous discharge is performed.
A wiring layer dry etching method comprising:
- a first step of preparing a semiconductor substrate on which a mask for patterning a wiring layer is formed, the mask being formed on the wiring layer;
- a second step of dry-etching affected layers on a surface of said wiring layer;
- and
- a third step of dry-etching said wiring layer by using said mask after said second step;
- and
- a fourth step of performing overetching for said wiring layer under the condition of a high selectivity to a base region when the base region of said wiring layer begins to be exposed or before a base region thereof is exposed,
- wherein when shifting is performed from said second step to said third step and/or when shifting is performed from said third step to said fourth step, vacuuming is not performed, and continuous discharge is performed.
A wiring layer dry etching method comprising:
- a first step of preparing a semiconductor substrate on which a mask for patterning a wiring layer is formed, the mask being formed on the wiring layer;
- a second step of dry-etching said wiring layer by using said mask;
- and
- a third step of performing overetching for said wiring layer under the condition of a high selectivity to a base region when the base region of said wiring layer begins to be exposed or before a base region thereof is exposed,
- when shifting is performed from said second step to said third step, vacuuming is not performed, and continuous discharge is performed.
A semiconductor device manufacturing method comprising:
- a first step of preparing a semiconductor substrate on which a mask for patterning a wiring layer is formed, the mask being formed on the wiring layer;
- a second step of removing affected layers on a surface of said wiring layer;
- and
- a third step of dry-etching said wiring layer by using said mask, wherein when shifting is performed from said second step to said third step, vacuuming is not performed, and continuous discharge is performed.
Dependencies are inferred from the claim text.