Method of manufacturing a semiconductor device
AssigneeNEC Electronics Corporation
InventorYoshiaki Yamamoto
Life of this patent
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Abstract
A method of manufacturing a semiconductor device forms a agglomeration-free seed layer on the inner surface of a recessed portion so as to restrain voids in a metal filled by the plating method. The method includes forming a barrier metal layer on a surface of the recessed portion, forming a seed layer on the barrier metal layer, and forming a metal filled in the recessed portion by the plating method making use of the seed layer. The method further includes retaining the water for 50 seconds or more, after forming the barrier metal layer, in a chamber with a vacuum state set therein other than the seed layer forming chamber.
Claims20
A method of manufacturing semiconductor device comprising:
- forming a depression in a semiconductor wafer;
- covering a surface of said depression with a barrier layer;
- and
- covering a surface of said barrier layer with a seed layer,
- wherein said semiconductor wafer is retained, prior to covering the surface of said barrier layer with the seed layer, for such a period of time that may prevent the seed layer covering the barrier layer from agglomerating.
A method of manufacturing a semiconductor device, comprising:
- processing a first semiconductor substrate in a first seed layer forming chamber;
- forming a seed layer on a second semiconductor substrate in a second seed layer forming chamber after retaining said second semiconductor substrate for a time which prevents said seed layer from agglomerating;
- retaining a third semiconductor substrate out of said first or said second seed layer forming chamber;
- and
- forming a barrier layer on a fourth semiconductor substrate in a first barrier layer forming chamber, wherein said processing, said forming said seed layer, said retaining and said forming said barrier layer are performed at a first period.
A method of manufacturing a semiconductor device, comprising:
- forming a barrier layer on a depression on a first semiconductor substrate at a first period;
- forming a barrier layer on a depression on a second semiconductor substrate and retaining said first semiconductor substrate out of a first or a second seed layer forming chamber at a second period;
- transferring said first semiconductor substrate into said first seed layer forming chamber after said second period;
- processing said first semiconductor substrate in said first seed layer forming chamber and retaining said second semiconductor substrate out of said first or said second seed layer forming chamber at a third period;
- transferring said second semiconductor substrate into a second seed layer forming chamber after said third period;
- and
- processing said second semiconductor substrate in said second seed layer forming chamber and continuing to process said first semiconductor substrate in said first seed layer forming chamber at a fourth period.
Dependencies are inferred from the claim text.