Method for manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsHideshi Miyajima, Miyoko Shimada, Rempei Nakata
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Abstract
Disclosed is a method for manufacturing a semiconductor device, comprising forming a low dielectric constant insulating film containing Si atoms over a semiconductor substrate, heating the low dielectric constant insulating film while irradiating the low dielectric constant insulating film with an electron beam, and exposing the low dielectric constant insulating film during or after the heating to a gas promoting the bond formation of the Si atoms.
Claims20
A method for manufacturing a semiconductor device comprising:
- forming a low dielectric constant insulating film containing Si atoms over a semiconductor substrate;
- heating said low dielectric constant insulating film while irradiating the low dielectric constant insulating film with an electron beam;
- and
- exposing the low dielectric constant insulating film during or after the heating to a gas promoting the bond formation of said Si atoms.
A method for manufacturing a semiconductor device, comprising:
- forming a low dielectric constant insulating film over a semiconductor substrate;
- heating said low dielectric constant insulating film under an atmosphere containing an inert gas while irradiating said low dielectric constant insulating film with an electron beam;
- and
- irradiating the low dielectric constant insulating film during or after the heating with positively charged ions.
A method for manufacturing a semiconductor device, comprising:
- forming a low dielectric constant insulating film containing an organic component over a semiconductor substrate;
- transferring said semiconductor substrate into a process chamber;
- heating said low dielectric constant insulating film while irradiating said low dielectric constant insulating film with an electron beam within said process chamber;
- transferring said semiconductor substrate out of said process chamber after the heating;
- introducing an oxidizing gas into said process chamber;
- and
- applying a high frequency voltage to a region within said process chamber having said oxidizing gas introduced therein so as to generate a plasma and, thus, to clean said process chamber.
Dependencies are inferred from the claim text.